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  • Product Description
    • Commodity name: G50203SNG-3
    • Commodity ID: 1131280537050828800

    P/N TE0604TA Product Description Lan transformer,DIP Number of Ports Single Speed 10BASE-T POE Rating NON-POE Rev A0 NOTES 1.RoHS Compliant; 2.Designed to meet IEEE802.3 requirements; 3.Storage Temperature:-40℃ To 120℃,Operating Temperature: -40℃ To 110℃; 4.SRP: Conforms to IPC/JEDEC J-STD-020; 5.Solderability:Conforms to ANSI/J-STD-002; 6.Packaging with tubes. Electrical Specification at 25℃ Parameter Specifications OCL 350uH Min(100KHz,0.1V With 20mA DC Bias) 675uH Min(100KHz,0.1V) LL 0.8uH Max(100KHz,0.02V) Pin1-5 shorted(Pin6-4-2) Turns Ratio 0.55uH Max(100KHz,0.1V) DCR 0.60Ω Max Hi-Pot PRI To SEC(600Vrms 1mA 60Sec) Schematic Dimensions Http://www.mag-tek.com.cn E-mail: sales@mag-tek.com.cn Tel: 86-769-86636536 Address: QingFeng East Road 511#, Shijie Town, Dongguan City, Guangdong Province.

    img P/N G50203SNG-3
    Product Description Lan transformer, SMT
    Number of Ports Dual
    Speed 1000BASE-T
    POE Rating NON-POE
    Rev A0

    NOTES

    1.RoHS Compliant;
    2.Designed to meet IEEE802.3 requirements;
    3.Storage Temperature:-40℃ To +85℃,OperatingTemperature:0℃ To +70℃;
    4.SRP: Conforms to IPC/JEDEC J-STD-020;
    5.Solderability:Conforms to ANSI/J-STD-002;
    6.Packaging with tapes and reels.

    Electrical Specification at 25℃
    Parameter Specifications
    OCL 350uH Min(100KHz,0.2V With 8mA DC Bias)
    LL 0.5uH Max(100KHz,0.2V)
    Turns Ratio 1:1±5%
    DCR 1.4Ω Max
    Hi-Pot PRI To SEC(1500Vrms 1mA 60Sec)
    Insertion Loss -1.1dB Max(1-100MHz)
    Return Loss 1-40MHz 60MHz 80MHz 100MHz
    -18dB Min -14dB Min -12dB Min -10dB Min
    Cross Talk 30MHz 60MHz 100MHz
    -40dB Min -35dB Min -30dB Min
    Common Mode Rejection -40dB Min(1-100MHz)
    Schematic Dimensions

    Http://www.mag-tek.com.cn

    E-mail: sales@mag-tek.com.cn

    Tel: +86-769-86636536

    Address: QingFeng East Road 295#, Shijie Town, Dongguan City, Guangdong Province.

Key words:

wound common mode filter

online message

The integrally formed inductor includes a base body and a winding body, that is, the winding body is embedded in the metal magnetic powder and then pressed and cast. The SMD pin is directly formed on the surface of the base body as the lead-out pin of the winding body, which mainly solves long-term operation under high current conditions and can stably supply power and filter. As the volume of electronic products becomes smaller and smaller, the power becomes larger and the electronic components become smaller, the development of high power. The integrated inductor is also developing simultaneously. The smaller the volume, the more suitable it is for other industries. The development of integrated inductor in the future is infinite and huge, and it can replace the traditional I-shaped inductor, glue-shielded inductor and magnetic-shielded inductor.

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